PDNM6T20V7E Datasheet. Specs and Replacement

Type Designator: PDNM6T20V7E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 448 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT-23-6L

PDNM6T20V7E substitution

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PDNM6T20V7E datasheet

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PDNM6T20V7E

PDNM6T20V7E Dual N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m ) ID(A) 20 16@ VGS=4.5V 7 Internal Structure Top View(SOT23-6) D1(D2) S1 6 G1 1 D1(D2) 5 D1(D2) 2 G1 G2 4 S2 3 G2 S1 S2 Absolute maximum rating@25 Parameter Symbol M... See More ⇒

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PDNM6T20V7E

PDNM6UT20V05 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 20 0.29@ VGS=4.5V 0.5 SOT-363 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 V Gat... See More ⇒

 9.2. Size:224K  prisemi
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PDNM6T20V7E

PDNM6ET20V05 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D 20 0.29@ V =4.5V 0.5 GS 1 S2 6 S2 D2 D2 5 G2 G1 G2 G1 2 3 4 S1 S1 D1 D1 Circuit Diagram Marking (Top View) Absolute maximum rating@25 Parameter ... See More ⇒

Detailed specifications: P5N50C, P9B40HP2, PCP1302, PCP1402, PCP1403, PCP1405, PDM6T20V3, PDM6UT20V08E, 50N06, PDNM6UT20V05, PDNM8TP20V6E, PDNM8TP20V7E, PDPM6N20V3, PH1225AL, PH1330AL, PH16030L, PH1730AL

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