PDNM6T20V7E - параметры транзистора MOSFET, его аналоги, datasheet

PDNM6T20V7E Datasheet (PDF)

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PDNM6T20V7E Dual N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) 20 16@ VGS=4.5V 7Internal Structure Top View(SOT23-6) D1(D2) S1 6 G1 1 D1(D2) 5 D1(D2)2 G1 G2 4 S2 3 G2 S1 S2 Absolute maximum rating@25 Parameter Symbol M

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PDNM6UT20V05 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.29@ VGS=4.5V 0.5SOT-363 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 VGat

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PDNM6ET20V05 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R () I (A) DS DS(on) D20 0.29@ V =4.5V 0.5 GS1 S2 6 S2 D2 D2 5 G2 G1 G2 G1 2 3 4 S1 S1 D1 D1 Circuit Diagram Marking (Top View) Absolute maximum rating@25 Parameter

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