PH1330AL Datasheet and Replacement
Type Designator: PH1330AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 121 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 108 nS
Cossⓘ - Output Capacitance: 1415 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
Package: LFPAK2
PH1330AL substitution
PH1330AL Datasheet (PDF)
ph1330al 1.pdf
PH1330ALN-channel 30 V 1.3 m logic level MOSFET in LFPAKRev. 01 14 October 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed for computing customers only1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate ch
ph1330al.pdf
PH1330ALN-channel 30 V 1.3 m logic level MOSFET in LFPAKRev. 01 14 October 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed for computing customers only1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate ch
Datasheet: PDM6T20V3 , PDM6UT20V08E , PDNM6T20V7E , PDNM6UT20V05 , PDNM8TP20V6E , PDNM8TP20V7E , PDPM6N20V3 , PH1225AL , IRFB4110 , PH16030L , PH1730AL , PH1825AL , PH1875L , PH1930AL , PH1955L , PH20100S , PH2525L .
History: PHD98N03LT | HYG018N10NS1B6 | RF1S630SM | RF1S9540SM | 2N7002PT
Keywords - PH1330AL MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: PHD98N03LT | HYG018N10NS1B6 | RF1S630SM | RF1S9540SM | 2N7002PT
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