All MOSFET. PH1875L Datasheet

 

PH1875L MOSFET. Datasheet pdf. Equivalent

Type Designator: PH1875L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 62.5 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 45.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 33.4 nC

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 285 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0165 Ohm

Package: LFPAK

PH1875L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH1875L Datasheet (PDF)

1.1. ph1875l.pdf Size:100K _update_mosfet

PH1875L PH1875L

PH1875L N-channel TrenchMOS logic level FET Rev. 01 — 29 November 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance Low thermal resistance Surface-mounted package 1.3 Applications DC

1.2. ph1875l.pdf Size:102K _philips

PH1875L PH1875L

PH1875L N-channel TrenchMOS logic level FET Rev. 01 29 November 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance Low thermal resistance Surface-mounted package 1.3 Applications DC moto

 

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