PH4530L Specs and Replacement

Type Designator: PH4530L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 769 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: LFPAK

PH4530L substitution

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PH4530L datasheet

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PH4530L

PH4530L N-channel TrenchMOS logic level FET Rev. 02 26 January 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low thermal resistance SO8 equivalent area footprint Logic level gate drive Low on-state resistance. 1.3 Applications ... See More ⇒

Detailed specifications: PH3230S, PH3330L, PH3430AL, PH3830L, PH3855L, PH4025L, PH4030AL, PH4330L, IRF9540N, PH4830L, PH4840S, PH5030AL, PH5330E, PH5525L, PH6030AL, PH6030L, PH6325L

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