PH5030AL Datasheet and Replacement
Type Designator: PH5030AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 61 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 91 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 373 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: LFPAK
PH5030AL substitution
PH5030AL Datasheet (PDF)
ph5030al.pdf

PH5030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph5030al.pdf

PH5030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
Datasheet: PH3830L , PH3855L , PH4025L , PH4030AL , PH4330L , PH4530L , PH4830L , PH4840S , AO3400 , PH5330E , PH5525L , PH6030AL , PH6030L , PH6325L , PH7030AL , PH7030L , PH8030L .
History: IPP114N03LG | TPB60R580C
Keywords - PH5030AL MOSFET datasheet
PH5030AL cross reference
PH5030AL equivalent finder
PH5030AL lookup
PH5030AL substitution
PH5030AL replacement
History: IPP114N03LG | TPB60R580C



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