All MOSFET. PH9025L Datasheet

 

PH9025L Datasheet and Replacement


   Type Designator: PH9025L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 387 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: LFPAK
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PH9025L Datasheet (PDF)

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PH9025L

PH9025LN-channel TrenchMOS logic level FETRev. 01 23 August 2007 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Lead-free package Optimized for use in DC-to-DC Very low switching and conductionconverters losses

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History: LSH80R980GT

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