All MOSFET. PH9030L Datasheet

 

PH9030L Datasheet and Replacement


   Type Designator: PH9030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 355 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: LFPAK
 

 PH9030L substitution

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PH9030L Datasheet (PDF)

 ..1. Size:155K  philips
ph9030l.pdf pdf_icon

PH9030L

PH9030LN-channel TrenchMOS logic level FETRev. 01 29 July 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b

 ..2. Size:155K  nxp
ph9030l.pdf pdf_icon

PH9030L

PH9030LN-channel TrenchMOS logic level FETRev. 01 29 July 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b

 8.1. Size:163K  philips
ph9030al.pdf pdf_icon

PH9030L

PH9030ALN-channel TrenchMOS logic level FETRev. 07 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

 8.2. Size:163K  nxp
ph9030al.pdf pdf_icon

PH9030L

PH9030ALN-channel TrenchMOS logic level FETRev. 07 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

Datasheet: PH6030L , PH6325L , PH7030AL , PH7030L , PH8030L , PH8230E , PH9025L , PH9030AL , AON7506 , PH955L , PH9930L , PHK4NQ10T , PHK4NQ20T , PHM12NQ20T , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T .

History: NVMFD020N06C | HM120N04D | IPD90N04S3-H4 | AFP8452

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