All MOSFET. PH9030L Datasheet

 

PH9030L Datasheet and Replacement


   Type Designator: PH9030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 355 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: LFPAK
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PH9030L Datasheet (PDF)

 ..1. Size:155K  philips
ph9030l.pdf pdf_icon

PH9030L

PH9030LN-channel TrenchMOS logic level FETRev. 01 29 July 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b

 ..2. Size:155K  nxp
ph9030l.pdf pdf_icon

PH9030L

PH9030LN-channel TrenchMOS logic level FETRev. 01 29 July 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b

 8.1. Size:163K  philips
ph9030al.pdf pdf_icon

PH9030L

PH9030ALN-channel TrenchMOS logic level FETRev. 07 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

 8.2. Size:163K  nxp
ph9030al.pdf pdf_icon

PH9030L

PH9030ALN-channel TrenchMOS logic level FETRev. 07 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BL7N80-I | DMNH10H028SCT | WML11N80M3 | AP2316GN-HF | KP743B1 | FK18SM-10 | IRLS4030

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