PH955L Datasheet and Replacement
Type Designator: PH955L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 62.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 441 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: LFPAK
PH955L substitution
PH955L Datasheet (PDF)
ph955l.pdf

PH955LN-channel TrenchMOS logic level FETRev. 02 19 February 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features an
Datasheet: PH6325L , PH7030AL , PH7030L , PH8030L , PH8230E , PH9025L , PH9030AL , PH9030L , IRLZ44N , PH9930L , PHK4NQ10T , PHK4NQ20T , PHM12NQ20T , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , PHM25NQ10T .
History: BSC042N03SG | IRF7832PBF | ELM33411CA | SSF2610E | FQI9N25CTU | TPCA8027-H | IXFH36N55Q
Keywords - PH955L MOSFET datasheet
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History: BSC042N03SG | IRF7832PBF | ELM33411CA | SSF2610E | FQI9N25CTU | TPCA8027-H | IXFH36N55Q



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