PH9930L Datasheet and Replacement
Type Designator: PH9930L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 63 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 355 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
Package: LFPAK
PH9930L substitution
PH9930L Datasheet (PDF)
ph9930l.pdf

PH9930LN-channel TrenchMOS logic level FETRev. 01 23 August 2007 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Lead-free package Optimized for use in DC-to-DC Very low switching and conductionconverters losses
Datasheet: PH7030AL , PH7030L , PH8030L , PH8230E , PH9025L , PH9030AL , PH9030L , PH955L , AO4407 , PHK4NQ10T , PHK4NQ20T , PHM12NQ20T , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , PHM25NQ10T , PHM30NQ10T .
History: TPCA8063-H | IRF7665S2TRPBF | AON6502 | IRFS520 | OSG60R030HTZF | AOB66613L | BSC252N10NSF
Keywords - PH9930L MOSFET datasheet
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History: TPCA8063-H | IRF7665S2TRPBF | AON6502 | IRFS520 | OSG60R030HTZF | AOB66613L | BSC252N10NSF



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