All MOSFET. PHK4NQ20T Datasheet

 

PHK4NQ20T Datasheet and Replacement


   Type Designator: PHK4NQ20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT96-1
 

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PHK4NQ20T Datasheet (PDF)

 ..1. Size:233K  philips
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PHK4NQ20T

PHK4NQ20TTrenchMOS standard level FETM3D315Rev. 01 20 January 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHK4NQ20T in SOT96-1 (SO8).1.2 Features Low on-state resistance Surface mount package.1.3 Applications DC-DC primary side switch

 8.1. Size:84K  philips
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PHK4NQ20T

Philips Semiconductors Product specification N-channel TrenchMOSTM transistor PHK4NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Low on-state resistance d Fast switching VDS = 100 V Low profile surface mountpackage ID = 4 AgRDS(ON) 70 m (VGS = 10 V)sGENERAL DESCRIPTION PINNING SOT96-1 (SO8)8 7 6 5N-channel enhancement mode PIN DESCRIPTIONfield-effect transi

Datasheet: PH8030L , PH8230E , PH9025L , PH9030AL , PH9030L , PH955L , PH9930L , PHK4NQ10T , IRFP450 , PHM12NQ20T , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , PHT2NQ10T , PI5101-00-LGIZ .

History: IXFH12N100P | HUFA75337P3 | AP3A010MT | HM60N20 | AM6441P | PA610DTF | MEM2310X

Keywords - PHK4NQ20T MOSFET datasheet

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