PHK4NQ20T Specs and Replacement
Type Designator: PHK4NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 155 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT96-1
PHK4NQ20T substitution
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PHK4NQ20T datasheet
phk4nq20t.pdf
PHK4NQ20T TrenchMOS standard level FET M3D315 Rev. 01 20 January 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHK4NQ20T in SOT96-1 (SO8). 1.2 Features Low on-state resistance Surface mount package. 1.3 Applications DC-DC primary side switch... See More ⇒
phk4nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOSTM transistor PHK4NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Low on-state resistance d Fast switching VDS = 100 V Low profile surface mount package ID = 4 A g RDS(ON) 70 m (VGS = 10 V) s GENERAL DESCRIPTION PINNING SOT96-1 (SO8) 8 7 6 5 N-channel enhancement mode PIN DESCRIPTION field-effect transi... See More ⇒
Detailed specifications: PH8030L, PH8230E, PH9025L, PH9030AL, PH9030L, PH955L, PH9930L, PHK4NQ10T, NCEP15T14, PHM12NQ20T, PHM15NQ20T, PHM18NQ15T, PHM21NQ15T, PHM25NQ10T, PHM30NQ10T, PHT2NQ10T, PI5101-00-LGIZ
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