PHK4NQ20T MOSFET. Datasheet pdf. Equivalent
Type Designator: PHK4NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT96-1
PHK4NQ20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHK4NQ20T Datasheet (PDF)
phk4nq20t.pdf
PHK4NQ20TTrenchMOS standard level FETM3D315Rev. 01 20 January 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHK4NQ20T in SOT96-1 (SO8).1.2 Features Low on-state resistance Surface mount package.1.3 Applications DC-DC primary side switch
phk4nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOSTM transistor PHK4NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Low on-state resistance d Fast switching VDS = 100 V Low profile surface mountpackage ID = 4 AgRDS(ON) 70 m (VGS = 10 V)sGENERAL DESCRIPTION PINNING SOT96-1 (SO8)8 7 6 5N-channel enhancement mode PIN DESCRIPTIONfield-effect transi
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