PHM30NQ10T Specs and Replacement

Type Designator: PHM30NQ10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: QLPAK

PHM30NQ10T substitution

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PHM30NQ10T datasheet

 ..1. Size:269K  philips
 phm30nq10t.pdf pdf_icon

PHM30NQ10T

PHM30NQ10T TrenchMOS standard level FET Rev. 02 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile. 1.3 Applications DC-to-DC primary side Porta... See More ⇒

Detailed specifications: PH9930L, PHK4NQ10T, PHK4NQ20T, PHM12NQ20T, PHM15NQ20T, PHM18NQ15T, PHM21NQ15T, PHM25NQ10T, BS170, PHT2NQ10T, PI5101-00-LGIZ, PJ2301, PJ2306, PJ4N3KDW, QH8KA1, QH8KA2, QH8MA2

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