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QH8MA2 PDF Specs and Replacement


   Type Designator: QH8MA2
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TSMT8
 

 QH8MA2 substitution

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QH8MA2 PDF Specs

 ..1. Size:4311K  rohm
 qh8ma2.pdf pdf_icon

QH8MA2

QH8MA2 Datasheet 30V Nch+Pch Power MOSFET lOutline l TSMT8 Symbol Tr1 Nch Tr2 Pch VDSS 30V -30V RDS(on)(Max.) 35m 80m ID 4.5A 3A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plati... See More ⇒

 9.1. Size:4739K  rohm
 qh8ma4.pdf pdf_icon

QH8MA2

QH8MA4 Datasheet 30V Nch+Pch Middle Power MOSFET lOutline l TSMT8 Tr1 Nch Tr2 Pch Symbol VDSS 30V -30V RDS(on)(Max.) 16.0m 28.6m ID 9.0A 8.0A PD 2.6W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-f... See More ⇒

 9.2. Size:4499K  rohm
 qh8ma3.pdf pdf_icon

QH8MA2

QH8MA3 Datasheet 30V Nch+Pch Middle Power MOSFET lOutline l TSMT8 Tr1 Nch Tr2 Pch Symbol VDSS 30V -30V RDS(on)(Max.) 29m 48m ID 7.0A 5.5A PD 2.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free ... See More ⇒

Detailed specifications: PHM30NQ10T , PHT2NQ10T , PI5101-00-LGIZ , PJ2301 , PJ2306 , PJ4N3KDW , QH8KA1 , QH8KA2 , SI2302 , QH8MA3 , QH8MA4 , QJD1210006 , QJD1210007 , QJD1210010 , QJD1210011 , QM0004D , QM0004G .

History: QH8MA4

Keywords - QH8MA2 MOSFET specs

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