QH8MA2 MOSFET. Datasheet pdf. Equivalent
Type Designator: QH8MA2
Marking Code: MA2
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.4 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 62 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TSMT8
QH8MA2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QH8MA2 Datasheet (PDF)
qh8ma2.pdf
QH8MA2Datasheet30V Nch+Pch Power MOSFETlOutlinel TSMT8Symbol Tr1:Nch Tr2:PchVDSS 30V -30V RDS(on)(Max.) 35m 80m ID 4.5A 3A PD 1.5W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package (TSMT8).3) Pb-free lead plati
qh8ma4.pdf
QH8MA4Datasheet30V Nch+Pch Middle Power MOSFETlOutlinel TSMT8Tr1:Nch Tr2:PchSymbolVDSS 30V -30V RDS(on)(Max.) 16.0m 28.6m ID 9.0A 8.0A PD 2.6W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package (TSMT8).3) Pb-f
qh8ma3.pdf
QH8MA3Datasheet30V Nch+Pch Middle Power MOSFETlOutlinel TSMT8Tr1:Nch Tr2:PchSymbolVDSS 30V -30V RDS(on)(Max.) 29m 48m ID 7.0A 5.5A PD 2.5W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package (TSMT8).3) Pb-free
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918