QH8MA2 MOSFET. Datasheet pdf. Equivalent
Type Designator: QH8MA2
Marking Code: MA2
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 1.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.4 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 62 pF
Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Package: TSMT8
QH8MA2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QH8MA2 Datasheet (PDF)
0.1. qh8ma2.pdf 
Size:4311K _rohm
QH8MA2 Datasheet 30V Nch+Pch Power MOSFET lOutline l TSMT8 Symbol Tr1:Nch Tr2:Pch VDSS 30V -30V RDS(on)(Max.) 35mΩ 80mΩ ID ±4.5A ±3A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plati
9.1. qh8ma3.pdf Size:4499K _rohm
QH8MA3 Datasheet 30V Nch+Pch Middle Power MOSFET lOutline l TSMT8 Tr1:Nch Tr2:Pch Symbol VDSS 30V -30V RDS(on)(Max.) 29mΩ 48mΩ ID ±7.0A ±5.5A PD 2.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free
9.2. qh8ma4.pdf Size:4739K _rohm
QH8MA4 Datasheet 30V Nch+Pch Middle Power MOSFET lOutline l TSMT8 Tr1:Nch Tr2:Pch Symbol VDSS 30V -30V RDS(on)(Max.) 16.0mΩ 28.6mΩ ID ±9.0A ±8.0A PD 2.6W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-f
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
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