All MOSFET. QH8MA3 Datasheet

 

QH8MA3 Datasheet and Replacement


   Type Designator: QH8MA3
   Marking Code: MA3
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.2 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TSMT8
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QH8MA3 Datasheet (PDF)

 ..1. Size:4499K  rohm
 qh8ma3.pdf pdf_icon

QH8MA3

QH8MA3Datasheet30V Nch+Pch Middle Power MOSFETlOutlinel TSMT8Tr1:Nch Tr2:PchSymbolVDSS 30V -30V RDS(on)(Max.) 29m 48m ID 7.0A 5.5A PD 2.5W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package (TSMT8).3) Pb-free

 9.1. Size:4739K  rohm
 qh8ma4.pdf pdf_icon

QH8MA3

QH8MA4Datasheet30V Nch+Pch Middle Power MOSFETlOutlinel TSMT8Tr1:Nch Tr2:PchSymbolVDSS 30V -30V RDS(on)(Max.) 16.0m 28.6m ID 9.0A 8.0A PD 2.6W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package (TSMT8).3) Pb-f

 9.2. Size:4311K  rohm
 qh8ma2.pdf pdf_icon

QH8MA3

QH8MA2Datasheet30V Nch+Pch Power MOSFETlOutlinel TSMT8Symbol Tr1:Nch Tr2:PchVDSS 30V -30V RDS(on)(Max.) 35m 80m ID 4.5A 3A PD 1.5W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package (TSMT8).3) Pb-free lead plati

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History: RSH110N03TB1 | KP502A

Keywords - QH8MA3 MOSFET datasheet

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