QJD1210011 PDF Specs and Replacement
Type Designator: QJD1210011
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 900 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13.6 nS
Cossⓘ - Output Capacitance: 1000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: MODULE
QJD1210011 substitution
QJD1210011 PDF Specs
qjd1210011.pdf
QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.com MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z Q DETAIL "B" Q Q P U Description 1 2 3 4 5 6 7 8 9 10 11 12 Powerex Silicon Carbide MOSFET X Modules are designed for use in B high frequency applications. Each M N E mo... See More ⇒
qjd1210010.pdf
QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.com MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z Q DETAIL "B" Q Q P U Description 1 2 3 4 5 6 7 8 9 10 11 12 Powerex Silicon Carbide MOSFET X Modules are designed for use in B high frequency applications. Each M N E mo... See More ⇒
qjd1210007.pdf
QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.com MOSFET Module 100 Amperes/1200 Volts A D Y K K K Y F U H S1D2 S2 D1 U J E B U H Z AB M AD U AC AA Description G Q Q Q P N Powerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP) high frequency ap... See More ⇒
qjd1210006.pdf
QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.com MOSFET Module 100 Amperes/1200 Volts A D Y K K K Y F U H S1D2 S2 D1 U J E B U H Z AB M AD U AC AA Description G Q Q Q P N Powerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP) high frequency ap... See More ⇒
Detailed specifications: QH8KA1 , QH8KA2 , QH8MA2 , QH8MA3 , QH8MA4 , QJD1210006 , QJD1210007 , QJD1210010 , STF13NM60N , QM0004D , QM0004G , QM0004P , QM0004S , QM0004U , QM0006G , QM0007G , QM0008D .
History: QM0004G | QM0004D | QM2605V
Keywords - QJD1210011 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: QM0004G | QM0004D | QM2605V
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