QM0006G PDF Specs and Replacement
Type Designator: QM0006G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 3
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 100
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075
Ohm
Package:
SOT-223
-
MOSFET ⓘ Cross-Reference Search
QM0006G PDF Specs
..1. Size:368K ubiq
qm0006g.pdf 
QM0006G N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0006G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 75m 3A for most of the synchronous buck converter applications . Applications The QM0006G meet the RoHS and Green Product requirement with... See More ⇒
9.1. Size:776K ubiq
qm0005d.pdf 
QM0005D P-Channel 100V Fast Switching MOSFET General Description Product Summary The QM0005D is the highest performance trench RDSON ID P-Channel MOSFET with extreme high cell BVDSS (VGS=-10V) (TC=25 ) density , which provide excellent RDSON and gate charge for most of the synchronous buck converter -100V 150m -13.4A applications . Applications The QM0005D meet the R... See More ⇒
9.2. Size:340K ubiq
qm0004s.pdf 
QM0004S N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0004S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 112m 2.5A for most of the synchronous buck converter applications . Applications The QM0004S meet the RoHS and Green Product requirement ,... See More ⇒
9.3. Size:343K ubiq
qm0008d.pdf 
QM0008D N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0008D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 5.4A for most of the synchronous buck converter applications . Applications The QM0008D meet the RoHS and Green Product requirement w... See More ⇒
9.4. Size:325K ubiq
qm0008g.pdf 
QM0008G N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0008G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 2.2A for most of the small power switching and load switch applications. Applications The QM0008G meet the RoHS and Green Product re... See More ⇒
9.5. Size:334K ubiq
qm0008j.pdf 
QM0008J N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0008J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 2.2A for most of the small power switching and load switch applications. Applications The QM0008J meet the RoHS and Green Product re... See More ⇒
9.6. Size:341K ubiq
qm0008u.pdf 
QM0008U N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0008U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 5.4A for most of the synchronous buck converter applications . Applications The QM0008U meet the RoHS and Green Product requirement w... See More ⇒
9.7. Size:346K ubiq
qm0004d.pdf 
QM0004D N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0004D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 112m 12A for most of the synchronous buck converter applications . Applications The QM0004D meet the RoHS and Green Product requirement , ... See More ⇒
9.8. Size:267K ubiq
qm0007g.pdf 
QM0007G P-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0007G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -100V 0.65 -1.5A for most of the small power switching and load switch applications. Applications The QM0007G meet the RoHS and Green Product r... See More ⇒
9.9. Size:340K ubiq
qm0004u.pdf 
QM0004U N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0004U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 112m 12A for most of the synchronous buck converter applications . Applications The QM0004U meet the RoHS and Green Product requirement , ... See More ⇒
9.10. Size:339K ubiq
qm0004p.pdf 
QM0004P N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0004P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 112m 15.7A for most of the synchronous buck converter applications . Applications The QM0004P meet the RoHS and Green Product requirement ... See More ⇒
9.11. Size:303K ubiq
qm0008k.pdf 
QM0008K N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0008K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 1.2A for most of the small power switching and load switch applications. Applications The QM0008K meet the RoHS and Green Product re... See More ⇒
9.12. Size:328K ubiq
qm0004g.pdf 
QM0004G N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0004G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 112m 2.5A for most of the small power switching and load switch applications. Applications The QM0004G meet the RoHS and Green Product req... See More ⇒
9.13. Size:899K cn vbsemi
qm0008k.pdf 
QM0008K www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backlighting... See More ⇒
Detailed specifications: QJD1210007
, QJD1210010
, QJD1210011
, QM0004D
, QM0004G
, QM0004P
, QM0004S
, QM0004U
, AO3400A
, QM0007G
, QM0008D
, QM0008G
, QM0008J
, QM0008K
, QM0008U
, QM0016D
, QM0016F
.
Keywords - QM0006G MOSFET specs
QM0006G cross reference
QM0006G equivalent finder
QM0006G pdf lookup
QM0006G substitution
QM0006G replacement
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