QM0007G Datasheet and Replacement
Type Designator: QM0007G
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 18.4
nS
Cossⓘ -
Output Capacitance: 29
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65
Ohm
Package:
SOT-223
- MOSFET Cross-Reference Search
QM0007G Datasheet (PDF)
..1. Size:267K ubiq
qm0007g.pdf 
QM0007G P-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0007G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -100V 0.65 -1.5Afor most of the small power switching and load switch applications. Applications The QM0007G meet the RoHS and Green Product r
9.1. Size:776K ubiq
qm0005d.pdf 
QM0005D P-Channel 100V Fast Switching MOSFETGeneral Description Product Summary The QM0005D is the highest performance trench RDSON ID P-Channel MOSFET with extreme high cellBVDSS(VGS=-10V) (TC=25)density , which provide excellent RDSON and gate charge for most of the synchronous buck converter -100V 150m -13.4Aapplications . Applications The QM0005D meet the R
9.2. Size:340K ubiq
qm0004s.pdf 
QM0004S N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0004S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 112m 2.5Afor most of the synchronous buck converter applications . Applications The QM0004S meet the RoHS and Green Product requirement ,
9.3. Size:343K ubiq
qm0008d.pdf 
QM0008D N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 5.4Afor most of the synchronous buck converter applications . Applications The QM0008D meet the RoHS and Green Product requirement w
9.4. Size:368K ubiq
qm0006g.pdf 
QM0006G N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0006G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 75m 3Afor most of the synchronous buck converter applications . Applications The QM0006G meet the RoHS and Green Product requirement with
9.5. Size:325K ubiq
qm0008g.pdf 
QM0008G N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 2.2Afor most of the small power switching and load switch applications. Applications The QM0008G meet the RoHS and Green Product re
9.6. Size:334K ubiq
qm0008j.pdf 
QM0008J N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 2.2Afor most of the small power switching and load switch applications. Applications The QM0008J meet the RoHS and Green Product re
9.7. Size:341K ubiq
qm0008u.pdf 
QM0008U N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 5.4Afor most of the synchronous buck converter applications . Applications The QM0008U meet the RoHS and Green Product requirement w
9.8. Size:346K ubiq
qm0004d.pdf 
QM0004D N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0004D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 112m 12Afor most of the synchronous buck converter applications . Applications The QM0004D meet the RoHS and Green Product requirement ,
9.9. Size:340K ubiq
qm0004u.pdf 
QM0004U N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0004U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 112m 12Afor most of the synchronous buck converter applications . Applications The QM0004U meet the RoHS and Green Product requirement ,
9.10. Size:339K ubiq
qm0004p.pdf 
QM0004P N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0004P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 112m 15.7Afor most of the synchronous buck converter applications . Applications The QM0004P meet the RoHS and Green Product requirement
9.11. Size:303K ubiq
qm0008k.pdf 
QM0008K N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 1.2Afor most of the small power switching and load switch applications. Applications The QM0008K meet the RoHS and Green Product re
9.12. Size:328K ubiq
qm0004g.pdf 
QM0004G N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0004G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 112m 2.5Afor most of the small power switching and load switch applications. Applications The QM0004G meet the RoHS and Green Product req
9.13. Size:899K cn vbsemi
qm0008k.pdf 
QM0008Kwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlighting
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History: 20N03L-TO252
| 2N6762JTXV
Keywords - QM0007G MOSFET datasheet
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