All MOSFET. QM0020AP Datasheet

 

QM0020AP Datasheet and Replacement


   Type Designator: QM0020AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 128 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1042 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-220
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QM0020AP Datasheet (PDF)

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QM0020AP

QM0020AP N-Ch 80V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0020AP is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 8.5m 128Afor most of the synchronous buck converter applications . Applications The QM0020AP meet the RoHS and Green Product requirement

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QM0020AP

QM0020P N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0020P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 5.7m 163Afor most of the synchronous buck converter applications . Applications The QM0020P meet the RoHS and Green Product requirement

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FS2KM-18A | HGP053N06SL | SIHFR9012 | SVGP107R0NL5 | MTW14N50E | 2P986V | GSM3410

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