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QM0020AP PDF Specs and Replacement


   Type Designator: QM0020AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 128 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1042 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-220
 

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QM0020AP PDF Specs

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QM0020AP

QM0020AP N-Ch 80V Fast Switching MOSFETs General Description Product Summery The QM0020AP is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 8.5m 128A for most of the synchronous buck converter applications . Applications The QM0020AP meet the RoHS and Green Product requirement... See More ⇒

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QM0020AP

QM0020P N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0020P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 5.7m 163A for most of the synchronous buck converter applications . Applications The QM0020P meet the RoHS and Green Product requirement ... See More ⇒

Detailed specifications: QM0008J , QM0008K , QM0008U , QM0016D , QM0016F , QM0016P , QM0016S , QM0018AD , K2611 , QM0020P , QM01N65D , QM01N65L , QM01N65U , QM02N65D , QM02N65U , QM03N65D , QM03N65F .

Keywords - QM0020AP MOSFET specs

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