QM0020P Datasheet and Replacement
Type Designator: QM0020P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 163 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 1120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: TO-220
QM0020P substitution
QM0020P Datasheet (PDF)
qm0020p.pdf

QM0020P N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0020P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 5.7m 163Afor most of the synchronous buck converter applications . Applications The QM0020P meet the RoHS and Green Product requirement
qm0020ap.pdf

QM0020AP N-Ch 80V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0020AP is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 8.5m 128Afor most of the synchronous buck converter applications . Applications The QM0020AP meet the RoHS and Green Product requirement
Datasheet: QM0008K , QM0008U , QM0016D , QM0016F , QM0016P , QM0016S , QM0018AD , QM0020AP , 2SK3918 , QM01N65D , QM01N65L , QM01N65U , QM02N65D , QM02N65U , QM03N65D , QM03N65F , QM04N60F .
History: 2SK2417 | IRFY130C | 2N5519 | 2N5907 | SIZ710DT
Keywords - QM0020P MOSFET datasheet
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History: 2SK2417 | IRFY130C | 2N5519 | 2N5907 | SIZ710DT



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