All MOSFET. QM01N65D Datasheet

 

QM01N65D Datasheet and Replacement


   Type Designator: QM01N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18.4 nS
   Cossⓘ - Output Capacitance: 17.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO-252
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QM01N65D Datasheet (PDF)

 ..1. Size:318K  ubiq
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QM01N65D

QM01N65D 1 2011-06-22 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65D is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 1.2Amost of the synchronous buck converterapplications . Applications The QM01N65D meet the RoHS and

 7.1. Size:324K  ubiq
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QM01N65D

QM01N65U 1 2011-05-25 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65U is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 1.2Amost of the synchronous buck converterapplications . Applications The QM01N65U meet the RoHS and

 7.2. Size:317K  ubiq
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QM01N65D

QM01N65L 1 2011-06-15 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65L is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 0.2Amost of the synchronous buck converterapplications . Applications The QM01N65L meet the RoHS and

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: S80N08RN | SVGP20110NSTR | IRFU9111 | MXP4004AT | ECH8419 | 2SK3561 | MEE42942-G

Keywords - QM01N65D MOSFET datasheet

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