PHP37N06LT Datasheet and Replacement
Type Designator: PHP37N06LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 37 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT78
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PHP37N06LT Datasheet (PDF)
php37n06lt phb37n06lt phd37n06lt.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP37N06LT, PHB37N06LT, PHD37N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 37 A Stable off-state characteristics High thermal cycling performance RDS(ON) 35 m (VGS = 5 V)g Low thermal
php37n06lt 3.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP37N06LT, PHB37N06LT, PHD37N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 37 A Stable off-state characteristics High thermal cycling performance RDS(ON) 35 m (VGS = 5 V)g Low thermal
php37n06t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP37N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 37 Afeatures very low on-state r
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