QM2409G
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM2409G
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 3.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.7
nC
trⓘ - Rise Time: 9.6
nS
Cossⓘ -
Output Capacitance: 90.8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075
Ohm
Package:
SOT-223
QM2409G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM2409G
Datasheet (PDF)
..1. Size:346K ubiq
qm2409g.pdf
QM2409G P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7Afor most of the small power switching and load switch applications. Applications The QM2409G meet the RoHS and Green Product req
8.1. Size:357K ubiq
qm2409j.pdf
QM2409J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7Afor most of the small power switching and load switch applications. Applications The QM2409J meet the RoHS and Green Product req
8.2. Size:324K ubiq
qm2409k.pdf
QM2409K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.1Afor most of the small power switching and load switch applications. Applications The QM2409K meet the RoHS and Green Product req
8.3. Size:365K ubiq
qm2409v.pdf
QM2409V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.3Afor most of the small power switching and load switch applications. Applications The QM2409V meet the RoHS and Green Product req
8.4. Size:906K cn vbsemi
qm2409k.pdf
QM2409Kwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
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