PHP3N50E Datasheet and Replacement

Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 3.4 Ag Low thermal resistanceRDS(ON) 3 sGENERAL DESCRIPTIONN-channel, enhan

Philips Semiconductors Product specification PowerMOS transistor PHP3N50 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 3.4 Aoff-state characteristics, fast Ptot Total power dissipati

Philips Semiconductors Product specification PowerMOS transistors PHP3N60E, PHB3N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 Ag Low thermal resistanceRDS(ON) 4.4 sGENERAL DESCRIPTIONN-channel, enh

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 Ag Low thermal resistanceRDS(ON) 3.5 sGENERAL DESCRIPTIONN-ch

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 Ag Low thermal resistanceRDS(ON) 3.5 sGENERAL DESCRIPTIONN-ch

Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 200 Vavalanche energy capability, stable ID Drain current (DC) 3.5 Ablocking voltage, fast swit

Philips Semiconductors Product specification PowerMOS transistor PHP3N20E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 200 Vavalanche energy capability, stable ID Drain current (DC) 3.5 Ablocking voltage, fast switching and Ptot Total power dis