QM2421M3
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM2421M3
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.67
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 6.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17.2
nC
trⓘ - Rise Time: 11.8
nS
Cossⓘ -
Output Capacitance: 165
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package: PRPAK3X3
QM2421M3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM2421M3
Datasheet (PDF)
..1. Size:319K ubiq
qm2421m3.pdf
QM2421M3 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2421M3 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 32m -24Afor most of the small power switching and load switch applications. Applications The QM2421M3 meet the RoHS and Green Product r
8.1. Size:320K ubiq
qm2421k.pdf
QM2421K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2421K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 43m -4Afor most of the small power switching and load switch applications. Applications The QM2421K meet the RoHS and Green Product requi
9.1. Size:324K ubiq
qm2423k.pdf
QM2423K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.2Afor most of the small power switching and load switch applications. Applications The QM2423K meet the RoHS and Green Product requ
9.2. Size:355K ubiq
qm2429s.pdf
QM2429S P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2429S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 15m -8.5Afor most of the small power switching and load switch applications. Applications The QM2429S meet the RoHS and Green Product req
9.3. Size:326K ubiq
qm2427s.pdf
QM2427S P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2427S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 9m -10.7Afor most of the synchronous buck converter applications . Applications The QM2427S meet the RoHS and Green Product requirement wi
9.4. Size:311K ubiq
qm2420k.pdf
QM2420K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2420K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 85m 3 Afor most of the small power switching and load switch applications. Applications The QM2420K meet the RoHS and Green Product require
9.5. Size:355K ubiq
qm2423v.pdf
QM2423V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.5Afor most of the small power switching and load switch applications. Applications The QM2423V meet the RoHS and Green Product requ
9.6. Size:906K cn vbsemi
qm2423k.pdf
QM2423Kwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
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