QM2506W
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM2506W
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.5
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
TSSOP-8
QM2506W
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM2506W
Datasheet (PDF)
..1. Size:338K ubiq
qm2506w.pdf 
QM2506W Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2506W is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 5Afor most of the small power switching and load switch applications. Applications The QM2506W meet the RoHS and Green Product req
9.1. Size:345K ubiq
qm2507w.pdf
QM2507W Dual P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2507W is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2Afor most of the small power switching and load switch applications. Applications The QM2507W meet the RoHS and Green Product
9.2. Size:337K ubiq
qm2502s.pdf
QM2502S Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 18.5m 7Afor most of the small power switching and load switch applications. Applications The QM2502S meet the RoHS and Green Product r
9.3. Size:345K ubiq
qm2502w.pdf
QM2502W Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502W is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 22m 5.8Afor most of the small power switching and load switch applications. Applications The QM2502W meet the RoHS and Green Product r
9.4. Size:348K ubiq
qm2504w.pdf
QM2504W Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2504W is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 22m 5.8Afor most of the small power switching and load switch applications. Applications The QM2504W meet the RoHS and Green Product r
9.5. Size:338K ubiq
qm2502m9.pdf
QM2502M9 Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502M9 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 18.5m 11Afor most of the small power switching and load switch applications. Applications The QM2502M9 meet the RoHS and Green Produ
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