PHP4N60E Datasheet and Replacement
Type Designator: PHP4N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: SOT78
PHP4N60E substitution
PHP4N60E Datasheet (PDF)
php4n60e phb4n60e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 Ag Low thermal resistanceRDS(ON) 2.5 sGENERAL DESCRIPTIONN-channel, enh
php4nd40e 2.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP4ND40E, PHB4ND40E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 400 V Fast switching Stable off-state characteristics ID = 4.4 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.8 Fast reverse recovery di
php4n50e 1.pdf

Philips Semiconductors Objective specification PowerMOS transistor PHP4N50E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 5.3 Ablocking voltage, fast switching and Ptot Total power d
Datasheet: PHP3055L , PHP33N10 , PHP37N06LT , PHP3N40E , PHP3N50E , PHP3N60E , PHP42N03LT , PHP44N06LT , IRF730 , PHP4ND40E , PHP50N03LT , PHP50N06LT , PHP55N03LT , PHP60N06LT , PHP65N06LT , PHP69N03LT , PHP6N10E .
Keywords - PHP4N60E MOSFET datasheet
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History: PHP6N60E | APT6015JN



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