PHP4ND40E PDF and Equivalents Search

Philips Semiconductors Product specification PowerMOS transistors PHP4ND40E, PHB4ND40E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 400 V Fast switching Stable off-state characteristics ID = 4.4 A High thermal cycling performance g Low thermal resistance RDS(ON) 1.8 Fast reverse recovery di... See More ⇒

Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 A g Low thermal resistance RDS(ON) 2.5 s GENERAL DESCRIPTION N-channel, enh... See More ⇒

Philips Semiconductors Objective specification PowerMOS transistor PHP4N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 5.3 A blocking voltage, fast switching and Ptot Total power d... See More ⇒