PHP4ND40E
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP4ND40E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8
Ohm
Package:
SOT78
PHP4ND40E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP4ND40E
Datasheet (PDF)
..1. Size:64K philips
php4nd40e 2.pdf 
Philips Semiconductors Product specification PowerMOS transistors PHP4ND40E, PHB4ND40E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 400 V Fast switching Stable off-state characteristics ID = 4.4 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.8 Fast reverse recovery di
9.1. Size:80K philips
php4n60e phb4n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 Ag Low thermal resistanceRDS(ON) 2.5 sGENERAL DESCRIPTIONN-channel, enh
9.2. Size:20K philips
php4n50e 1.pdf
Philips Semiconductors Objective specification PowerMOS transistor PHP4N50E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 5.3 Ablocking voltage, fast switching and Ptot Total power d
Datasheet: PHP33N10
, PHP37N06LT
, PHP3N40E
, PHP3N50E
, PHP3N60E
, PHP42N03LT
, PHP44N06LT
, PHP4N60E
, IRF520
, PHP50N03LT
, PHP50N06LT
, PHP55N03LT
, PHP60N06LT
, PHP65N06LT
, PHP69N03LT
, PHP6N10E
, PHP6N50E
.
