PHP55N03LT MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP55N03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 103 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 55 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOT78
PHP55N03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP55N03LT Datasheet (PDF)
phb55n03lt phd55n03lt php55n03lt 6.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP55N03LT, PHB55N03LT Logic level FET PHD55N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 55 A Low thermal resistance Logic level compatible RDS(ON) 14 m (VGS = 10 V)gRDS(ON) 18 m (VGS
php55n03lta phb55n03lta phd55n03lta.pdf
PHP55N03LTA;PHB55N03LTA;PHD55N03LTAN-channel enhancement mode field-effect transistorRev. 02 2 August 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP55N03LTA in a SOT78 (TO-220AB)PHB55N03LTA in a SOT404 (D2-PAK)PHD55N03LTA in a SOT428 (D-PAK).2. Features Low
php55n03t 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP55N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 55 Afeatures very low on-state r
Datasheet: PHP3N50E , PHP3N60E , PHP42N03LT , PHP44N06LT , PHP4N60E , PHP4ND40E , PHP50N03LT , PHP50N06LT , AO3407 , PHP60N06LT , PHP65N06LT , PHP69N03LT , PHP6N10E , PHP6N50E , PHP6N60E , PHP6ND50E , PHP7N60E .
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