PHP60N06LT Datasheet and Replacement
Type Designator: PHP60N06LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT78
PHP60N06LT substitution
PHP60N06LT Datasheet (PDF)
php60n06lt 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V)g Low thermal resistance
php60n06lt phb60n06lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V)g Low thermal resistance
php60n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP60N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 58 Afeatures very low on-state r
Datasheet: PHP3N60E , PHP42N03LT , PHP44N06LT , PHP4N60E , PHP4ND40E , PHP50N03LT , PHP50N06LT , PHP55N03LT , IRFZ46N , PHP65N06LT , PHP69N03LT , PHP6N10E , PHP6N50E , PHP6N60E , PHP6ND50E , PHP7N60E , PHP80N06LT .
History: HSBB0012
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: HSBB0012
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