All MOSFET. PHP6N60E Datasheet

 

PHP6N60E MOSFET. Datasheet pdf. Equivalent

Type Designator: PHP6N60E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Drain Current |Id|: 5.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: SOT78

PHP6N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHP6N60E Datasheet (PDF)

1.1. php6n60e phb6n60e.pdf Size:74K _philips2

PHP6N60E
PHP6N60E

Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 5.4 A g • Low thermal resistance RDS(ON) ≤ 1.8 Ω s GENERAL DESCRIPTION N-channel, enh

5.1. php6nd50e 2.pdf Size:63K _philips2

PHP6N60E
PHP6N60E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performance g Low thermal resistance RDS(ON) ? 1.5 ? Fast reverse recovery diode trr = 180 ns

5.2. php6nd50e phb6nd50e.pdf Size:58K _philips2

PHP6N60E
PHP6N60E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated VDSS = 500 V • Fast switching • Stable off-state characteristics ID = 5.9 A • High thermal cycling performance g • Low thermal resistance RDS(ON) ≤ 1.5 Ω • Fast reverse recovery di

5.3. php6n50e phb6n50e.pdf Size:77K _philips2

PHP6N60E
PHP6N60E

Philips Semiconductors Product specification PowerMOS transistors PHP6N50E, PHB6N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 5.9 A g • Low thermal resistance RDS(ON) ≤ 1.5 Ω s GENERAL DESCRIPTION N-channel, enh

5.4. php6n10e 1.pdf Size:53K _philips2

PHP6N60E
PHP6N60E

Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 100 V avalanche energy capability, stable ID Drain current (DC) 6.3 A blocking voltage, fast switching and Ptot Total power dissip

Datasheet: PHP50N03LT , PHP50N06LT , PHP55N03LT , PHP60N06LT , PHP65N06LT , PHP69N03LT , PHP6N10E , PHP6N50E , 2SK105 , PHP6ND50E , PHP7N60E , PHP80N06LT , PHP87N03LT , PHP8N50E , PHP8ND50E , PHT11N06LT , PHT6N03LT .

 


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