Справочник MOSFET. PHP6N60E

 

PHP6N60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PHP6N60E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: SOT78

 Аналог (замена) для PHP6N60E

 

 

PHP6N60E Datasheet (PDF)

 ..1. Size:74K  philips
 php6n60e phb6n60e.pdf

PHP6N60E PHP6N60E

Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 5.4 Ag Low thermal resistanceRDS(ON) 1.8 sGENERAL DESCRIPTIONN-channel, enh

 9.1. Size:77K  philips
 php6n50e phb6n50e.pdf

PHP6N60E PHP6N60E

Philips Semiconductors Product specification PowerMOS transistors PHP6N50E, PHB6N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 5.9 Ag Low thermal resistanceRDS(ON) 1.5 sGENERAL DESCRIPTIONN-channel, enh

 9.2. Size:58K  philips
 php6nd50e phb6nd50e.pdf

PHP6N60E PHP6N60E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di

 9.3. Size:53K  philips
 php6n10e 1.pdf

PHP6N60E PHP6N60E

Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 100 Vavalanche energy capability, stable ID Drain current (DC) 6.3 Ablocking voltage, fast switching and Ptot Total power dis

 9.4. Size:63K  philips
 php6nd50e 2.pdf

PHP6N60E PHP6N60E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di

Другие MOSFET... PHP50N03LT , PHP50N06LT , PHP55N03LT , PHP60N06LT , PHP65N06LT , PHP69N03LT , PHP6N10E , PHP6N50E , EMB04N03H , PHP6ND50E , PHP7N60E , PHP80N06LT , PHP87N03LT , PHP8N50E , PHP8ND50E , PHT11N06LT , PHT6N03LT .

 

 
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