QM6006D
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM6006D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19.3
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 145
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
TO-252
QM6006D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM6006D
Datasheet (PDF)
..1. Size:312K ubiq
qm6006d.pdf 
QM6006D N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 35Afor most of the synchronous buck converter applications . Applications The QM6006D meet the RoHS and Green Product requirement , 100
8.1. Size:334K ubiq
qm6006f.pdf
QM6006F N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006F is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 30Afor most of the synchronous buck converter applications . Applications The QM6006F meet the RoHS and Green Product requirement , 10
8.2. Size:314K ubiq
qm6006p.pdf
QM6006P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 45Afor most of the synchronous buck converter applications . Applications The QM6006P meet the RoHS and Green Product requirement , 10
8.3. Size:224K ubiq
qm6006m6.pdf
QM6006M6 N-Ch 60V Fast Switching MOSFETs General Description Product Summary The QM6006M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 40A for most of the synchronous buck converter applications . Applications The QM6006M6 meet the RoHS and Green Product requirement
8.4. Size:347K ubiq
qm6006s.pdf
QM6006S N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 6.3Afor most of the synchronous buck converter applications . Applications The QM6006S meet the RoHS and Green Product requirement , 10
8.5. Size:302K ubiq
qm6006b.pdf
QM6006B N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006B is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 45Afor most of the synchronous buck converter applications . Applications The QM6006B meet the RoHS and Green Product requirement , 10
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