Справочник MOSFET. QM6006D

 

QM6006D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: QM6006D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 145 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для QM6006D

   - подбор ⓘ MOSFET транзистора по параметрам

 

QM6006D Datasheet (PDF)

 ..1. Size:312K  ubiq
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QM6006D

QM6006D N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 35Afor most of the synchronous buck converter applications . Applications The QM6006D meet the RoHS and Green Product requirement , 100

 8.1. Size:334K  ubiq
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QM6006D

QM6006F N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006F is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 30Afor most of the synchronous buck converter applications . Applications The QM6006F meet the RoHS and Green Product requirement , 10

 8.2. Size:314K  ubiq
qm6006p.pdfpdf_icon

QM6006D

QM6006P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 45Afor most of the synchronous buck converter applications . Applications The QM6006P meet the RoHS and Green Product requirement , 10

 8.3. Size:224K  ubiq
qm6006m6.pdfpdf_icon

QM6006D

QM6006M6 N-Ch 60V Fast Switching MOSFETs General Description Product Summary The QM6006M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 40A for most of the synchronous buck converter applications . Applications The QM6006M6 meet the RoHS and Green Product requirement

Другие MOSFET... QM6001D , QM6003F , QM6003S , QM6004D , QM6004F , QM6004P , QM6004S , QM6006B , 8205A , QM6006F , QM6006M6 , QM6006P , QM6006S , QM6007D , QM6007K , QM6007S , QM6008D .

 

 
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