All MOSFET. PHP8ND50E Datasheet

 

PHP8ND50E MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHP8ND50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT78

 PHP8ND50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHP8ND50E Datasheet (PDF)

 ..1. Size:90K  philips
 php8nd50e phb8nd50e phw8nd50e.pdf

PHP8ND50E PHP8ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 8.5 A High thermal cycling performanceg Low thermal resistance RDS(ON) 0.85 Fast reverse

 ..2. Size:72K  philips
 php8nd50e 3.pdf

PHP8ND50E PHP8ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 8.5 A High thermal cycling performanceg Low thermal resistance RDS(ON) 0.85 Fast reverse

 9.1. Size:90K  philips
 php8n50e phb8n50e phw8n50e.pdf

PHP8ND50E PHP8ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 8.5 Ag Low thermal resistanceRDS(ON) 0.85 sGENERAL DESCRIPTIONN-c

 9.2. Size:59K  philips
 php8n20e 2.pdf

PHP8ND50E PHP8ND50E

Philips Semiconductors Product specification PowerMOS transistor PHP8N20E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 200 Vavalanche energy capability, stable ID Drain current (DC) 9.2 Ablocking voltage, fast switching and Ptot Total power dis

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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