All MOSFET. QM6020AP Datasheet

 

QM6020AP MOSFET. Datasheet pdf. Equivalent


   Type Designator: QM6020AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 198 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 89 nC
   trⓘ - Rise Time: 40.6 nS
   Cossⓘ - Output Capacitance: 1565 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO-220

 QM6020AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QM6020AP Datasheet (PDF)

 ..1. Size:347K  ubiq
 qm6020ap.pdf

QM6020AP QM6020AP

QM6020AP N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6020AP is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 3.8m 198Afor most of the synchronous buck converter applications . Applications The QM6020AP meet the RoHS and Green Product requirement

 8.1. Size:304K  ubiq
 qm6020p.pdf

QM6020AP QM6020AP

QM6020P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6020P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 2.8m 242Afor most of the synchronous buck converter applications . Applications The QM6020P meet the RoHS and Green Product requirement , 1

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BUK7506-55B

 

 
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