All MOSFET. QM6020AP Datasheet

 

QM6020AP Datasheet and Replacement


   Type Designator: QM6020AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 198 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40.6 nS
   Cossⓘ - Output Capacitance: 1565 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO-220
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QM6020AP Datasheet (PDF)

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QM6020AP

QM6020AP N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6020AP is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 3.8m 198Afor most of the synchronous buck converter applications . Applications The QM6020AP meet the RoHS and Green Product requirement

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QM6020AP

QM6020P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6020P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 2.8m 242Afor most of the synchronous buck converter applications . Applications The QM6020P meet the RoHS and Green Product requirement , 1

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History: TSA9N90M

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