QM6020AP Datasheet. Specs and Replacement

Type Designator: QM6020AP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 198 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40.6 nS

Cossⓘ - Output Capacitance: 1565 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO-220

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QM6020AP datasheet

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QM6020AP

QM6020AP N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM6020AP is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 3.8m 198A for most of the synchronous buck converter applications . Applications The QM6020AP meet the RoHS and Green Product requirement ... See More ⇒

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QM6020AP

QM6020P N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM6020P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 2.8m 242A for most of the synchronous buck converter applications . Applications The QM6020P meet the RoHS and Green Product requirement , 1... See More ⇒

Detailed specifications: QM6014S, QM6015B, QM6015D, QM6015S, QM6016D, QM6016F, QM6016P, QM6016S, 2SK3568, QM6020P, QM6204S, QM6208S, QM6208V, QM6214Q, QM6214S, QM6301S, QM7018AD

Keywords - QM6020AP MOSFET specs

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