QM6214Q Datasheet. Specs and Replacement

Type Designator: QM6214Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: PDIP-8

QM6214Q substitution

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QM6214Q datasheet

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QM6214Q

QM6214Q Dual N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM6214Q is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 40m 60V 5.1A for most of the synchronous buck converter applications . Applications The QM6214Q meet the RoHS and Green Product requireme... See More ⇒

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QM6214Q

QM6214S Dual N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM6214S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 40m 60V 4.5A for most of the synchronous buck converter applications . Applications The QM6214S meet the RoHS and Green Product requireme... See More ⇒

Detailed specifications: QM6016F, QM6016P, QM6016S, QM6020AP, QM6020P, QM6204S, QM6208S, QM6208V, AO3407, QM6214S, QM6301S, QM7018AD, QM7020P, QM8014D, QM8014U, QM8205V, QN7002

Keywords - QM6214Q MOSFET specs

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