All MOSFET. QM6214Q Datasheet

 

QM6214Q Datasheet and Replacement


   Type Designator: QM6214Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: PDIP-8
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QM6214Q Datasheet (PDF)

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QM6214Q

QM6214Q Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6214Q is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 40m 60V 5.1A for most of the synchronous buck converter applications . Applications The QM6214Q meet the RoHS and Green Product requireme

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QM6214Q

QM6214S Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6214S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 40m 60V 4.5A for most of the synchronous buck converter applications . Applications The QM6214S meet the RoHS and Green Product requireme

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: VSD007N04MS-G | IRF441 | AP9926GEO | RW1C020UN | GSM3050S | WM02P30ME | STD4N62K3

Keywords - QM6214Q MOSFET datasheet

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