QS5U21
MOSFET. Datasheet pdf. Equivalent
Type Designator: QS5U21
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.2
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 60
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package: TSMT5
QS5U21
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QS5U21
Datasheet (PDF)
..1. Size:75K rohm
qs5u21.pdf 
QS5U21 Transistor 2.5V Drive Pch+SBD MOS FET QS5U21 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT5Schottky Barrier DIODE 1.0MAX 2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U21 combines Pch MOS FET with a 0~0.1(1) (2) (3)Schottky barrier diode in a TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching.
9.1. Size:66K rohm
qs5u26.pdf
QS5U26 Transistor 2.5V Drive Pch+SBD MOSFET QS5U26 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT5Schottky Barrier DIODE 1.0MAX 2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U26 combines Pch MOSFET with 0~0.1(1) (2) (3)a Schottky barrier diode in a TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching. 3) Low volta
9.2. Size:80K rohm
qs5u28.pdf
QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT5Schottky Barrier DIODE 1.0MAX 2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U28 combines Pch MOS FET with 0~0.1(1) (2) (3)a Schottky barrier diode in TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching. 3)
9.3. Size:74K rohm
qs5u23.pdf
QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT5Schottky Barrier DIODE 1.0MAX 2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U23 combines Pch MOS FET with a 0~0.1(1) (2) (3)Schottky barrier diode in a TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching.
9.4. Size:67K rohm
qs5u27.pdf
QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT5Schottky Barrier DIODE 1.0MAX2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U27 combines Pch MOS FET with a 0~0.1(1) (2) (3)Schottky barrier diode in a TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching. 3
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