All MOSFET. QS5U23 Datasheet

 

QS5U23 Datasheet and Replacement


   Type Designator: QS5U23
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TSMT5
 

 QS5U23 substitution

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QS5U23 Datasheet (PDF)

 ..1. Size:74K  rohm
 qs5u23.pdf pdf_icon

QS5U23

QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT5Schottky Barrier DIODE 1.0MAX 2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U23 combines Pch MOS FET with a 0~0.1(1) (2) (3)Schottky barrier diode in a TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching.

 9.1. Size:66K  rohm
 qs5u26.pdf pdf_icon

QS5U23

QS5U26 Transistor 2.5V Drive Pch+SBD MOSFET QS5U26 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT5Schottky Barrier DIODE 1.0MAX 2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U26 combines Pch MOSFET with 0~0.1(1) (2) (3)a Schottky barrier diode in a TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching. 3) Low volta

 9.2. Size:75K  rohm
 qs5u21.pdf pdf_icon

QS5U23

QS5U21 Transistor 2.5V Drive Pch+SBD MOS FET QS5U21 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT5Schottky Barrier DIODE 1.0MAX 2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U21 combines Pch MOS FET with a 0~0.1(1) (2) (3)Schottky barrier diode in a TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching.

 9.3. Size:80K  rohm
 qs5u28.pdf pdf_icon

QS5U23

QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT5Schottky Barrier DIODE 1.0MAX 2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U28 combines Pch MOS FET with 0~0.1(1) (2) (3)a Schottky barrier diode in TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching. 3)

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Datasheet: QM8205V , QN7002 , QS5K2 , QS5U12 , QS5U13 , QS5U16 , QS5U17 , QS5U21 , MMIS60R580P , QS5U26 , QS5U27 , QS5U33 , QS5U34 , QS5U36 , QS6J11 , QS6K1 , QS6K21 .

History: SI4622DY | VBZL80N03

Keywords - QS5U23 MOSFET datasheet

 QS5U23 cross reference
 QS5U23 equivalent finder
 QS5U23 lookup
 QS5U23 substitution
 QS5U23 replacement

 

 
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