QS5U26 Datasheet. Specs and Replacement

Type Designator: QS5U26

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TSMT5

QS5U26 substitution

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QS5U26 datasheet

 ..1. Size:66K  rohm
 qs5u26.pdf pdf_icon

QS5U26

QS5U26 Transistor 2.5V Drive Pch+SBD MOSFET QS5U26 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) Features 1) The QS5U26 combines Pch MOSFET with 0 0.1 (1) (2) (3) a Schottky barrier diode in a TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. 3) Low volta... See More ⇒

 9.1. Size:75K  rohm
 qs5u21.pdf pdf_icon

QS5U26

QS5U21 Transistor 2.5V Drive Pch+SBD MOS FET QS5U21 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) Features 1) The QS5U21 combines Pch MOS FET with a 0 0.1 (1) (2) (3) Schottky barrier diode in a TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. ... See More ⇒

 9.2. Size:80K  rohm
 qs5u28.pdf pdf_icon

QS5U26

QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) Features 1) The QS5U28 combines Pch MOS FET with 0 0.1 (1) (2) (3) a Schottky barrier diode in TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. 3)... See More ⇒

 9.3. Size:74K  rohm
 qs5u23.pdf pdf_icon

QS5U26

QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) Features 1) The QS5U23 combines Pch MOS FET with a 0 0.1 (1) (2) (3) Schottky barrier diode in a TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. ... See More ⇒

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Detailed specifications: QN7002, QS5K2, QS5U12, QS5U13, QS5U16, QS5U17, QS5U21, QS5U23, IRFZ48N, QS5U27, QS5U33, QS5U34, QS5U36, QS6J11, QS6K1, QS6K21, QS6M3

Keywords - QS5U26 MOSFET specs

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