QS5U36 MOSFET. Datasheet pdf. Equivalent
Type Designator: QS5U36
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.5 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
Package: TSMT5
QS5U36 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QS5U36 Datasheet (PDF)
qs5u36.pdf
QS5U36 Transistors 1.5V Drive Nch+SBD MOSFET QS5U36 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET TSMT5Schottky Barrier DIODE Features 1) The QS5U36 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (1.5V). Each lead has same dimensions4) The Independentl
qs5u34.pdf
QS5U34 Transistors 1.8V Drive Nch+SBD MOSFET QS5U34 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET TSMT5Schottky Barrier DIODE 1.0MAX2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U34 combines Nch MOSFET with a 0~0.1(1) (2) (3)Schottky barrier diode in a single TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching. 3)
qs5u33.pdf
QS5U33 Transistor 4V Drive Pch+SBD MOSFET QS5U33 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT5Schottky Barrier DIODE 1.0MAX 2.90.851.90.70.95 0.95(5) (4) Features 1) The QS5U33 combines Pch MOSFET with 0~0.1(1) (2) (3)a Schottky barrier diode in TSMT5 package. 0.4 0.162) Low on-state resistance with fast switching. 3) Low voltage d
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SUM110P08-11 | AOD9N52 | IXFR4N100Q
History: SUM110P08-11 | AOD9N52 | IXFR4N100Q
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