QS5U36 Datasheet. Specs and Replacement

Type Designator: QS5U36

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm

Package: TSMT5

QS5U36 substitution

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QS5U36 datasheet

 ..1. Size:106K  rohm
 qs5u36.pdf pdf_icon

QS5U36

QS5U36 Transistors 1.5V Drive Nch+SBD MOSFET QS5U36 Dimensions (Unit mm) Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE Features 1) The QS5U36 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (1.5V). Each lead has same dimensions 4) The Independentl... See More ⇒

 9.1. Size:65K  rohm
 qs5u34.pdf pdf_icon

QS5U36

QS5U34 Transistors 1.8V Drive Nch+SBD MOSFET QS5U34 Dimensions (Unit mm) Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) Features 1) The QS5U34 combines Nch MOSFET with a 0 0.1 (1) (2) (3) Schottky barrier diode in a single TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. 3) ... See More ⇒

 9.2. Size:65K  rohm
 qs5u33.pdf pdf_icon

QS5U36

QS5U33 Transistor 4V Drive Pch+SBD MOSFET QS5U33 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) Features 1) The QS5U33 combines Pch MOSFET with 0 0.1 (1) (2) (3) a Schottky barrier diode in TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. 3) Low voltage d... See More ⇒

Detailed specifications: QS5U16, QS5U17, QS5U21, QS5U23, QS5U26, QS5U27, QS5U33, QS5U34, IRF9640, QS6J11, QS6K1, QS6K21, QS6M3, QS6M4, QS6U22, QS6U24, QS8F2

Keywords - QS5U36 MOSFET specs

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