QS8K11 MOSFET PDF: N-Ch, 30V, 3.5A. Full specification with pinout and replacement list

QS8K11 PDF Specs and Replacement

   Type Designator: QS8K11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TSMT8

QS8K11 substitution

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QS8K11 PDF Specs

..1. Size:574K rohm
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QS8K11 Dual Nch 30V 3.5A Power MOSFET Datasheet lOutline (8) VDSS TSMT8 30V (7) (6) RDS(on) (Max.) (5) 50mW ID (1) 3.5A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Small Surface Mount Pac... See More ⇒

9.1. Size:1253K rohm
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Data Sheet 4V Drive Nch + Nch MOSFET QS8K12 Structure Dimensions (Unit mm) TSMT8 Silicon N-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). (1) (2) (3) (4) 3) Low voltage drive(4V drive). Abbreviated symbol K12 Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping ID=4A,... See More ⇒

9.2. Size:1438K rohm
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QS8K13 Dual Nch 30V 6.0A Power MOSFET Datasheet lOutline (8) VDSS TSMT8 30V (7) (6) RDS(on) (Max.) 28mW (5) ID 6A (1) (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain 3) Small Surface Mount Package (TSMT8). (4) Tr2 Gate ... See More ⇒

Detailed specifications: QS6U24 , QS8F2 , QS8J11 , QS8J12 , QS8J13 , QS8J2 , QS8J4 , QS8J5 , IRF740 , QS8K13 , QS8K2 , QS8K21 , QS8M11 , QS8M13 , QS8M51 , RFH25N18 , RFH25N20 .