All MOSFET. QS8K11 Datasheet

 

QS8K11 MOSFET. Datasheet pdf. Equivalent

Type Designator: QS8K11

SMD Transistor Code: K11

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.55 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 3.3 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: TSMT8

QS8K11 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

QS8K11 Datasheet (PDF)

1.1. qs8k11.pdf Size:574K _update_mosfet

QS8K11
QS8K11

QS8K11 Dual Nch 30V 3.5A Power MOSFET Datasheet lOutline (8) VDSS TSMT8 30V (7) (6) RDS(on) (Max.) (5) 50mW ID (1) 3.5A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Small Surface Mount Pac

1.2. qs8k11.pdf Size:1222K _rohm

QS8K11
QS8K11

Data Sheet 4V Drive Nch + Nch MOSFET QS8K11 ? Structure ? Dimensions (Unit : mm) TSMT8 Silicon N-channel MOSFET (8) (7) (6) (5) ?Features 1) Low on-resistance. 2) High power package(TSMT8). (1) (2) (3) (4) 3) Low voltage drive(4V drive). Abbreviated symbol : K11 ? Application Switching ? Packaging specifications ? Inner circuit (8) (7) (6) (5) Package Taping Type Code TCR Basi

 5.1. qs8k13.pdf Size:1438K _update_mosfet

QS8K11
QS8K11

QS8K13 Dual Nch 30V 6.0A Power MOSFET Datasheet lOutline (8) VDSS TSMT8 30V (7) (6) RDS(on) (Max.) 28mW (5) ID 6A (1) (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain 3) Small Surface Mount Package (TSMT8). (4) Tr2 Gate

5.2. qs8k12.pdf Size:1253K _rohm

QS8K11
QS8K11

Data Sheet 4V Drive Nch + Nch MOSFET QS8K12 ? Structure ? Dimensions (Unit : mm) TSMT8 Silicon N-channel MOSFET (8) (7) (6) (5) ?Features 1) Low on-resistance. 2) High power package(TSMT8). (1) (2) (3) (4) 3) Low voltage drive(4V drive). Abbreviated symbol : K12 ? Application Switching ? Packaging specifications ? Inner circuit (8) (7) (6) (5) Package Taping ID=4A, Type Code TC

 5.3. qs8k13.pdf Size:1244K _rohm

QS8K11
QS8K11

Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 ? Structure ? Dimensions (Unit : mm) TSMT8 Silicon N-channel MOSFET (8) (7) (6) (5) ?Features 1) Low on-resistance. 2) High power package(TSMT8). (1) (2) (3) (4) 3) Low voltage drive(4V drive). Abbreviated symbol : K13 ? Application Switching ? Packaging specifications ? Inner circuit (8) (7) (6) (5) Package Taping Type Code TCR Basi

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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