QS8M13 Datasheet. Specs and Replacement

Type Designator: QS8M13

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TSMT8

QS8M13 substitution

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QS8M13 datasheet

 ..1. Size:733K  rohm
 qs8m13.pdf pdf_icon

QS8M13

Data Sheet 4V Drive Nch + Pch MOSFET QS8M13 Structure Dimensions (Unit mm) TSMT8 Silicon N-channel MOSFET/ (8) (7) (6) (5) Silicon P-channel MOSFET Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol M13 Application Switching Inner circuit (8) (7) (6) (5) Packaging specificati... See More ⇒

 9.1. Size:427K  rohm
 qs8m11.pdf pdf_icon

QS8M13

Data Sheet 4V Drive Nch + Pch MOSFET QS8M11 Structure Dimensions (Unit mm) TSMT8 Silicon N-channel MOSFET/ (8) (7) (6) (5) Silicon P-channel MOSFET Features (1) (2) (3) (4) 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol M11 Application Switching Packaging specifications Inner circuit Package Tapi... See More ⇒

 9.2. Size:1346K  rohm
 qs8m12.pdf pdf_icon

QS8M13

Data Sheet 4V Drive Nch + Pch MOSFET QS8M12 Structure Dimensions (Unit mm) TSMT8 Silicon N-channel MOSFET/ (8) (7) (6) (5) Silicon P-channel MOSFET Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol M12 Application Switching Inner circuit (8) (7) (6) (5) Packaging specificati... See More ⇒

Detailed specifications: QS8J2, QS8J4, QS8J5, QS8K11, QS8K13, QS8K2, QS8K21, QS8M11, 50N06, QS8M51, RFH25N18, RFH25N20, RFH25P08, RFH25P10, RFH35N08, RFH35N10, RFH45N05

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