RFH25N18 Datasheet. Specs and Replacement

Type Designator: RFH25N18

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 180 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-218AC

RFH25N18 substitution

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RFH25N18 datasheet

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RFH25N18

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Detailed specifications: QS8J5, QS8K11, QS8K13, QS8K2, QS8K21, QS8M11, QS8M13, QS8M51, IRFZ44, RFH25N20, RFH25P08, RFH25P10, RFH35N08, RFH35N10, RFH45N05, RFH45N06, RFK25P08

Keywords - RFH25N18 MOSFET specs

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