RFH35N10 Datasheet. Specs and Replacement

Type Designator: RFH35N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 225 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO-218AC

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RFH35N10 datasheet

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RFH35N10

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Detailed specifications: QS8M11, QS8M13, QS8M51, RFH25N18, RFH25N20, RFH25P08, RFH25P10, RFH35N08, IRF640N, RFH45N05, RFH45N06, RFK25P08, RFK25P10, RFK35N08, RFK35N10, RFM10N12, RFM10N15

Keywords - RFH35N10 MOSFET specs

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