RFK25P10 Datasheet. Specs and Replacement

Type Designator: RFK25P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 165 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-204AE

RFK25P10 substitution

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RFK25P10 datasheet

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RFK25P10

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Detailed specifications: RFH25N20, RFH25P08, RFH25P10, RFH35N08, RFH35N10, RFH45N05, RFH45N06, RFK25P08, IRF3710, RFK35N08, RFK35N10, RFM10N12, RFM10N15, RFM12N08, RFM12N08L, RFM12N10, RFM12N10L

Keywords - RFK25P10 MOSFET specs

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