RFM10N12 Datasheet. Specs and Replacement

Type Designator: RFM10N12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 165 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-204AA

RFM10N12 substitution

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RFM10N12 datasheet

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RFM10N12

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Detailed specifications: RFH35N08, RFH35N10, RFH45N05, RFH45N06, RFK25P08, RFK25P10, RFK35N08, RFK35N10, IRFB4115, RFM10N15, RFM12N08, RFM12N08L, RFM12N10, RFM12N10L, RFM12N18, RFM12N20, RFM12P08

Keywords - RFM10N12 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs