RFM10N15 Datasheet. Specs and Replacement
Type Designator: RFM10N15
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 165 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-204AA
RFM10N15 substitution
- MOSFET ⓘ Cross-Reference Search
RFM10N15 datasheet
Detailed specifications: RFH35N10, RFH45N05, RFH45N06, RFK25P08, RFK25P10, RFK35N08, RFK35N10, RFM10N12, 2N7000, RFM12N08, RFM12N08L, RFM12N10, RFM12N10L, RFM12N18, RFM12N20, RFM12P08, RFM12P10
Keywords - RFM10N15 MOSFET specs
RFM10N15 cross reference
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History: GSM3459
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