All MOSFET. RFM15N06L Datasheet

 

RFM15N06L Datasheet and Replacement


   Type Designator: RFM15N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO-204AA
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RFM15N06L Datasheet (PDF)

 ..1. Size:89K  njs
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RFM15N06L

 8.1. Size:82K  njs
 rfm15n12 rfm15n15 rfp15n12 rfp15n15.pdf pdf_icon

RFM15N06L

 9.1. Size:309K  international rectifier
 irfm150.pdf pdf_icon

RFM15N06L

 9.2. Size:23K  semelab
 2n7224 irfm150.pdf pdf_icon

RFM15N06L

2N7224SEMEIRFM150LABMECHANICAL DATADimensions in mm (inches)NCHANNEL13.59 (0.535) 6.32 (0.249)POWER MOSFET13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)VDSS 100VID(cont) 34ARDS(on) 0.0701 2 3FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE0.89 (0.035)1.14 (0

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History: IPL60R2K1C6S | HLML6401 | SSF1030 | AOT11S60L | RF4E075AT | SSF9926 | AP85T03GH-HF

Keywords - RFM15N06L MOSFET datasheet

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