RFM25N06 Datasheet and Replacement
Type Designator: RFM25N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-204AA
RFM25N06 substitution
RFM25N06 Datasheet (PDF)
irfm250.pdf
PD - 90554EIRFM250JANTX2N7225JANTXV2N7225POWER MOSFETREF:MIL-PRF-19500/592THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM250 0.100 27.4AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
irfm250d.pdf
IRFM250DMECHANICAL DATANCHANNELDimensions in mm (inches)POWER MOSFETVDSS 200VID(cont) 27.4A RDS(on) 0.100 FEATURES NCHANNEL MOSFET
Datasheet: RFM12N20 , RFM12P08 , RFM12P10 , RFM15N05L , RFM15N06L , RFM15N12 , RFM15N15 , RFM25N05 , AO3400 , RFM5P12 , RFM5P15 , RFM8P08 , RFM8P10 , RFP10N12 , RFP10N15 , RFP12N08 , RFP12N08L .
History: NCE60N1K0I | AOE6932 | AP4543GEH-HF | PDN2309S | TSM75N75CZ
Keywords - RFM25N06 MOSFET datasheet
RFM25N06 cross reference
RFM25N06 equivalent finder
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RFM25N06 substitution
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History: NCE60N1K0I | AOE6932 | AP4543GEH-HF | PDN2309S | TSM75N75CZ
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