All MOSFET. PHW8N50E Datasheet

 

PHW8N50E Datasheet and Replacement


   Type Designator: PHW8N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT429
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PHW8N50E Datasheet (PDF)

 ..1. Size:90K  philips
 php8n50e phb8n50e phw8n50e.pdf pdf_icon

PHW8N50E

Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 8.5 Ag Low thermal resistanceRDS(ON) 0.85 sGENERAL DESCRIPTIONN-c

 9.1. Size:90K  philips
 php8nd50e phb8nd50e phw8nd50e.pdf pdf_icon

PHW8N50E

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 8.5 A High thermal cycling performanceg Low thermal resistance RDS(ON) 0.85 Fast reverse

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History: NX3008PBKS | GSM3436 | MTB06N03H8 | AMA920N | BUK454-800A | SVGP15110NL5 | 2N4222A

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